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Hohe Qualität, hohe Leistung, exzellenter Service
Das 980nm single mode fiber coupled laser diode serves as the heartbeat of modern optical communication and precision medical instruments. While other wavelengths are chosen for their specific absorption in tissues or transparency in silica, 980nm is uniquely defined by its efficiency as a pump source. In the realm of telecommunications, it provides the precise energy required to excite Erbium ions ($Er^{3+}$) to the $^4I_{11/2}$ state, enabling low-noise amplification.
From an engineering perspective, the transition to a Einmodenfaser-gekoppeltes Lasermodul at this wavelength presents a distinct set of challenges compared to multimode variants. The fundamental difference lies in the power density. Achieving 500mW to 800mW of “kink-free” power within a 6-micrometer fiber core pushes the boundaries of semiconductor physics and optical alignment. The goal for a manufacturer is not simply to achieve peak power, but to maintain a stable transverse mode across the entire operating current range, ensuring that the light remains focusable and the coupling remains efficient over a 25-year lifespan.
Die Leistung eines 980 nm Laserdiode begins at the epitaxial level. Most high-power 980nm diodes utilize an Indium Gallium Arsenide (InGaAs) strained quantum well (QW) structure, typically grown on a Gallium Arsenide (GaAs) substrate.
The introduction of “strain” in the quantum well is a deliberate engineering choice. By mismatching the lattice constant of the InGaAs layer with the GaAs substrate, the valence band structure is modified. This reduces the effective mass of the holes and suppresses “Auger recombination”—a non-radiative process that generates heat instead of light.
However, strain is a double-edged sword. Excessive strain can lead to dislocations (defects in the crystal lattice) which act as seeds for Catastrophic Optical Mirror Damage (COMD). To mitigate this, advanced epitaxial designs incorporate “strain-compensation” layers, typically using GaAsP. This allows for higher Indium content (reaching the 980nm target) while maintaining the structural integrity of the crystal. For the end-user, this translates to a diode that can withstand high current densities without internal degradation.
In the technical specifications of a single mode fasergekoppeltes Lasermodul, the term “Kink-Free Power” is paramount. A “kink” in the Power-vs-Current (L-I) curve occurs when the laser diode shifts from the fundamental transverse mode to a higher-order mode or when the spatial distribution of the carriers (Spatial Hole Burning) causes the beam to steer slightly.
As the injection current increases, the photon density in the center of the laser cavity becomes extremely high, depleting the carriers in that specific region. This creates a refractive index gradient that acts as a “lens,” focusing the beam further. If not managed, this lens effect can cause the beam to decouple from the single-mode fiber or trigger a mode hop.
Engineering a truly kink-free 980 nm laser diode requires a precise “Ridge Waveguide” design. The width of the ridge must be narrow enough to suppress higher-order modes (typically <4 μm) but wide enough to keep the optical power density at the facet below the threshold for COMD. The balance between ridge geometry and the doping profile of the cladding layers determines the ultimate stability of the module.
Coupling light into a single-mode fiber (SMF) is an exercise in extreme mechanical stability. The Mode Field Diameter (MFD) of a standard 980nm fiber (like HI980) is approximately 6.5 μm. To maintain 70-80% coupling efficiency, the alignment of the laser chip to the fiber must be stable within ±0.1 μm across a wide temperature range.
Die Rohleistung eines 980nm laser Diode chip is highly divergent. To bridge the gap between the chip and the fiber, a two-lens or specialized aspheric system is employed:
In high-stakes industries like subsea telecom or surgical lasers, the “Price per Watt” is irrelevant compared to the “Probability of Failure.” Reliability is built through rigorous adherence to standards such as Telcordia GR-468-CORE.
The primary failure mode for high-power 980nm diodes is COMD. At the output facet (mirror), the high photon density can cause localized heating. This heating reduces the bandgap, leading to more absorption, which leads to more heating—a thermal runaway process that melts the crystal facet in nanoseconds.
To prevent this, premium manufacturers employ “Non-Absorbing Mirrors” (NAM). This involves a process where the area near the facet is chemically modified or intermixed to have a wider bandgap than the rest of the cavity. Essentially, the mirror becomes transparent to the laser’s own light. When evaluating a 980 nm Einmodenfaser-gekoppelte Laserdiode, the presence of NAM technology is a key indicator of long-term durability.
Kundenhintergrund:
A Tier-1 telecommunications infrastructure provider developing a new generation of Erbium-Doped Fiber Amplifiers (EDFA) for long-haul terrestrial networks.
Technische Herausforderungen:
The customer experienced premature failures in their existing pump modules when deployed in high-temperature environments (desert regions). The failures were characterized by a sudden drop in gain, traced back to “fiber piston” effects and facet degradation in the pump diodes.
Technische Parameter und Einrichtung:
Lösung für die Qualitätskontrolle (QC):
We implemented a multi-stage screening process:
Schlussfolgerung:
By switching to a VBG/FBG-stabilized single mode fiber coupled laser module with NAM-treated facets, the customer achieved a 0% field failure rate over the first 18 months of deployment. The increased coupling efficiency also reduced the current required from the system power supply, lowering the overall heat signature of the amplifier rack.
| Parameter | Einheit | Standardqualität | High-Reliability Grade |
| Operating Wavelength | nm | 974 – 986 | 976 ± 1 (FBG Locked) |
| Output Power ($P_{op}$) | mW | 200 – 400 | 500 – 800 |
| Schwellenwertstrom ($I_{th}$) | mA | 40 – 60 | 30 – 50 |
| Operating Current ($I_{op}$) | mA | 400 – 700 | 800 – 1200 |
| Vorwärtsspannung ($V_f$) | V | 1.8 – 2.2 | 1.8 – 2.0 |
| Kink-Free Power | mW | Up to $P_{op}$ | $1.2 \times P_{op}$ |
| Spektralbreite (FWHM) | nm | 2.0 – 5.0 | < 0.2 (FBG) |
| Thermistor Resistance | kΩ | 10 ± 0.5% | 10 ± 0.1% |
| Fiber Pull Strength | N | > 5 | > 10 |
| Expected Lifetime (MTBF) | Stunden | 50,000 | > 200,000 |
Q1: Why is 976nm often used instead of 980nm?
The absorption peak of Erbium-doped fiber is extremely narrow, centered at approximately 976nm. While “980nm” is the general category name, precision pumps use a Fiber Bragg Grating (FBG) to lock the wavelength exactly to 976nm. This ensures maximum gain efficiency in the amplifier.
Q2: What is “Fiber Piston” and how does it affect the module?
Fiber piston refers to the longitudinal movement of the optical fiber tip within the module due to the thermal expansion of internal sub-mounts or adhesives. In a single mode fasergekoppelte Laserdiode, a movement of just a few micrometers can significantly de-focus the beam, leading to a loss of power. High-end modules use materials with matched Coefficients of Thermal Expansion (CTE) to prevent this.
Q3: Can a 980nm single mode diode be used for material processing?
Generally, no. Single-mode diodes are limited in power (under 1W). Material processing (cutting, welding) usually requires hundreds or thousands of watts, which necessitates multimode diode arrays. However, 980nm single-mode diodes are excellent for micro-soldering or highly localized heat treatment in medical micro-surgeries.
Q4: How does the internal optical isolator impact performance?
A 980nm system is highly sensitive to back-reflections. Light reflecting off a fiber connector or a target can re-enter the diode, causing “RIN” (Relative Intensity Noise) or even destroying the facet. An internal isolator allows light to pass out but blocks reflections, ensuring stable operation even in non-ideal optical environments.
Q5: What are the cooling requirements for a 800mW SM module?
High-power SM modules generate significant localized heat. While the internal TEC manages the chip temperature, the “hot side” of the TEC must be coupled to an external heatsink. Without a proper thermal path (usually a copper block with thermal paste), the TEC will saturate, and the module will overheat, leading to a catastrophic failure of both the TEC and the diode.
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